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Journal of Dental Research
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Improved Filler-Matrix Coupling in Resin Composites

Y. Yoshida1, K. Shirai2, Y. Nakayama3, M. Itoh2, M. Okazaki4, H. Shintani2, S. Inoue5, P. Lambrechts6, G. Vanherle6 and B. Van Meerbeek6,*

1 Department of Biomaterials, Okayama University Graduate Schools of Medicine and Dentistry, 2-5-1 Shikata-cho, Okayama 700-8525, Japan;
2 Department of Operative Dentistry, Hiroshima University Faculty of Dentistry, 1-2-3 Kasumi, Minami-Ku, Hiroshima 734-8553, Japan;
3 Surface Science Laboratory, Toray Research Centre Inc., Sonoyama 3-3-7, Otsu, Shiga 520-8567, Japan;
4 Department of Biomaterials Science, Hiroshima University Faculty of Dentistry, 1-2-3 Kasumi, Minami-Ku, Hiroshima 734-8553, Japan;
5 Department of Oral Health Science, Hokkaido University Graduate School of Dental Medicine, Kita 13 Nishi 7, Kita-ku, Sapporo 060-8586, Japan; and
6 Leuven BIOMAT Research Cluster-Department of Conservative Dentistry, School of Dentistry, Oral Pathology and Maxillo-Facial Surgery, Catholic University of Leuven, Kapucijnenvoer 7, B-3000, Leuven, Belgium;


Figure 1
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Figure 1. XPS wide-scan spectra of un-decontaminated SiO2 in (a), SiO2 boiled in 0.01 (b), 0.05 (c), 5 (d), and 10% (e) sodium peroxodisulfate solutions for 15 min, followed by ultrasonic rinsing with acetone for 30 min.

 

Figure 2
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Figure 2. XPS wide-scan spectra of SiO2 decontaminated with 5% sodium peroxodisulfate solution and acetone, then treated with {gamma}-MPTS, followed by ultrasonic rinsing twice in ultrapure water for 5 min in (a), SiO2 decontaminated with 5% sodium peroxodisulfate solution and acetone, then treated with TTDCS, followed by ultrasonic rinsing twice in chloroform for 5 min in (b), and SiO2 treated with TTDCS without pre-silanization decontamination in (c).

 

Figure 3
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Figure 3. XPS wide-scan spectrum of untreated Si in (a), Si decontaminated with 5% sodium peroxodisulfate solution and acetone in (b), Si decontaminated with 5% sodium peroxodisulfate solution and acetone, then dipped in a 10% hydrofluoric acid solution to remove the oxidation layer, followed by rinsing with ultrapure water in (c), contamination-free bare Si treated with {gamma}-MPTS in (d), and contamination-free bare Si treated with TTDCS in (e).

 

Figure 4
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Figure 4. Schematic presentation of the chemical interaction between TTDCS and Si in (a), TTDCS and SiO2 in (b), {gamma}-MPTS and Si in (c), and {gamma}–MPTS and SiO2 in (d), respectively.

 

Journal of Dental Research, Vol. 81, No. 4, 270-273 (2002)
DOI: 10.1177/154405910208100409


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