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Improved Filler-Matrix Coupling in Resin Composites
Y. Yoshida1,
K. Shirai2,
Y. Nakayama3,
M. Itoh2,
M. Okazaki4,
H. Shintani2,
S. Inoue5,
P. Lambrechts6,
G. Vanherle6 and
B. Van Meerbeek6,*
1 Department of Biomaterials, Okayama University Graduate Schools of Medicine and Dentistry, 2-5-1 Shikata-cho, Okayama 700-8525, Japan;
2 Department of Operative Dentistry, Hiroshima University Faculty of Dentistry, 1-2-3 Kasumi, Minami-Ku, Hiroshima 734-8553, Japan;
3 Surface Science Laboratory, Toray Research Centre Inc., Sonoyama 3-3-7, Otsu, Shiga 520-8567, Japan;
4 Department of Biomaterials Science, Hiroshima University Faculty of Dentistry, 1-2-3 Kasumi, Minami-Ku, Hiroshima 734-8553, Japan;
5 Department of Oral Health Science, Hokkaido University Graduate School of Dental Medicine, Kita 13 Nishi 7, Kita-ku, Sapporo 060-8586, Japan; and
6 Leuven BIOMAT Research Cluster-Department of Conservative Dentistry, School of Dentistry, Oral Pathology and Maxillo-Facial Surgery, Catholic University of Leuven, Kapucijnenvoer 7, B-3000, Leuven, Belgium;

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Figure 1. XPS wide-scan spectra of un-decontaminated SiO2 in (a), SiO2 boiled in 0.01 (b), 0.05 (c), 5 (d), and 10% (e) sodium peroxodisulfate solutions for 15 min, followed by ultrasonic rinsing with acetone for 30 min.
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Figure 2. XPS wide-scan spectra of SiO2 decontaminated with 5% sodium peroxodisulfate solution and acetone, then treated with -MPTS, followed by ultrasonic rinsing twice in ultrapure water for 5 min in (a), SiO2 decontaminated with 5% sodium peroxodisulfate solution and acetone, then treated with TTDCS, followed by ultrasonic rinsing twice in chloroform for 5 min in (b), and SiO2 treated with TTDCS without pre-silanization decontamination in (c).
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Figure 3. XPS wide-scan spectrum of untreated Si in (a), Si decontaminated with 5% sodium peroxodisulfate solution and acetone in (b), Si decontaminated with 5% sodium peroxodisulfate solution and acetone, then dipped in a 10% hydrofluoric acid solution to remove the oxidation layer, followed by rinsing with ultrapure water in (c), contamination-free bare Si treated with -MPTS in (d), and contamination-free bare Si treated with TTDCS in (e).
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Journal of Dental Research, Vol. 81, No. 4,
270-273 (2002)
DOI: 10.1177/154405910208100409

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